� For most conditions: n₀ << N
and the vacancy concentration

X_v = (n₀/N) is: X_v ~ exp(-H_v/kT)

� For H_v = 1 eV and T = 1000 K
the atomic concentration of vacancies is:

X_v~ 10 ^-5

The configurational entropy term is multiplied by the temperature. As T increases, the minimum moves to larger values of n.

Click on the temperature controls to see how the vacancy concentration varies.