Crystal Growth and characterization of Topological materials
The topological materials are the new state of matter. These show the unusual electronic properties possible technological applications in spintronics and quantum computation. These materials have been of great interest for the condensed matter community around the world, since few years. However, the defects in these materials significantly affect their topological properties. It is a big challenge to produce the clean samples, so the true electronic properties could be studied. I will present the growth of high quality crystals of some of the topological materials and few results obtained on these.
Bio
Satya K. Kushwaha is a Postdoctoral Associate in Prof. Robert J. Cava’s Lab, at Frick Chemistry Laboratory. He obtained his Ph.D. in Physics from Delhi University, Delhi, India and has been working in Princeton for about 3 years.